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Precision Comparison of the Lattice Parameters of Silicon Monocrystals

The lattice spacing comparator established at the National Institute of Standards and Technology to measure the lattice spacing differences between nearly perfect crystals is described in detail. Lattice spacing differences are inferred from the measured differences in Bragg angles for different cry...

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Detalles Bibliográficos
Autores principales: Kessler, E. G., Henins, A., Deslattes, R. D., Nielsen, L., Arif, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1994
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8345253/
https://www.ncbi.nlm.nih.gov/pubmed/37404357
http://dx.doi.org/10.6028/jres.099.002
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author Kessler, E. G.
Henins, A.
Deslattes, R. D.
Nielsen, L.
Arif, M.
author_facet Kessler, E. G.
Henins, A.
Deslattes, R. D.
Nielsen, L.
Arif, M.
author_sort Kessler, E. G.
collection PubMed
description The lattice spacing comparator established at the National Institute of Standards and Technology to measure the lattice spacing differences between nearly perfect crystals is described in detail. Lattice spacing differences are inferred from the measured differences in Bragg angles for different crystals. The comparator is a two crystal spectrometer used in the nearly nondispersive geometry. It has two x-ray sources, two detectors, and a device which permits remote interchange of the second crystal sample. A sensitive heterodyne interferometer which is calibrated with an optical polygon is used to measure the Bragg angles. The crystals are manufactured with nearly equal thicknesses so that the recorded profiles exhibit pendellosung oscillations which permit more precise division of the x-ray profiles. The difference in lattice spacing between silicon samples used at Physikalisch-Technische Bundesanstalt (PTB) and NIST has been measured with a relative uncertainly of 1 × 10(−8), This measurement is consistent with absolute lattice spacing measurements made at PTB and NIST. Components of uncertainty associated with systematic effects due to misalignments are derived and estimated.
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spelling pubmed-83452532023-07-03 Precision Comparison of the Lattice Parameters of Silicon Monocrystals Kessler, E. G. Henins, A. Deslattes, R. D. Nielsen, L. Arif, M. J Res Natl Inst Stand Technol Article The lattice spacing comparator established at the National Institute of Standards and Technology to measure the lattice spacing differences between nearly perfect crystals is described in detail. Lattice spacing differences are inferred from the measured differences in Bragg angles for different crystals. The comparator is a two crystal spectrometer used in the nearly nondispersive geometry. It has two x-ray sources, two detectors, and a device which permits remote interchange of the second crystal sample. A sensitive heterodyne interferometer which is calibrated with an optical polygon is used to measure the Bragg angles. The crystals are manufactured with nearly equal thicknesses so that the recorded profiles exhibit pendellosung oscillations which permit more precise division of the x-ray profiles. The difference in lattice spacing between silicon samples used at Physikalisch-Technische Bundesanstalt (PTB) and NIST has been measured with a relative uncertainly of 1 × 10(−8), This measurement is consistent with absolute lattice spacing measurements made at PTB and NIST. Components of uncertainty associated with systematic effects due to misalignments are derived and estimated. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1994 /pmc/articles/PMC8345253/ /pubmed/37404357 http://dx.doi.org/10.6028/jres.099.002 Text en https://creativecommons.org/publicdomain/zero/1.0/The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Kessler, E. G.
Henins, A.
Deslattes, R. D.
Nielsen, L.
Arif, M.
Precision Comparison of the Lattice Parameters of Silicon Monocrystals
title Precision Comparison of the Lattice Parameters of Silicon Monocrystals
title_full Precision Comparison of the Lattice Parameters of Silicon Monocrystals
title_fullStr Precision Comparison of the Lattice Parameters of Silicon Monocrystals
title_full_unstemmed Precision Comparison of the Lattice Parameters of Silicon Monocrystals
title_short Precision Comparison of the Lattice Parameters of Silicon Monocrystals
title_sort precision comparison of the lattice parameters of silicon monocrystals
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8345253/
https://www.ncbi.nlm.nih.gov/pubmed/37404357
http://dx.doi.org/10.6028/jres.099.002
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