Cargando…
Precision Comparison of the Lattice Parameters of Silicon Monocrystals
The lattice spacing comparator established at the National Institute of Standards and Technology to measure the lattice spacing differences between nearly perfect crystals is described in detail. Lattice spacing differences are inferred from the measured differences in Bragg angles for different cry...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1994
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8345253/ https://www.ncbi.nlm.nih.gov/pubmed/37404357 http://dx.doi.org/10.6028/jres.099.002 |
_version_ | 1783734585380569088 |
---|---|
author | Kessler, E. G. Henins, A. Deslattes, R. D. Nielsen, L. Arif, M. |
author_facet | Kessler, E. G. Henins, A. Deslattes, R. D. Nielsen, L. Arif, M. |
author_sort | Kessler, E. G. |
collection | PubMed |
description | The lattice spacing comparator established at the National Institute of Standards and Technology to measure the lattice spacing differences between nearly perfect crystals is described in detail. Lattice spacing differences are inferred from the measured differences in Bragg angles for different crystals. The comparator is a two crystal spectrometer used in the nearly nondispersive geometry. It has two x-ray sources, two detectors, and a device which permits remote interchange of the second crystal sample. A sensitive heterodyne interferometer which is calibrated with an optical polygon is used to measure the Bragg angles. The crystals are manufactured with nearly equal thicknesses so that the recorded profiles exhibit pendellosung oscillations which permit more precise division of the x-ray profiles. The difference in lattice spacing between silicon samples used at Physikalisch-Technische Bundesanstalt (PTB) and NIST has been measured with a relative uncertainly of 1 × 10(−8), This measurement is consistent with absolute lattice spacing measurements made at PTB and NIST. Components of uncertainty associated with systematic effects due to misalignments are derived and estimated. |
format | Online Article Text |
id | pubmed-8345253 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 1994 |
publisher | [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology |
record_format | MEDLINE/PubMed |
spelling | pubmed-83452532023-07-03 Precision Comparison of the Lattice Parameters of Silicon Monocrystals Kessler, E. G. Henins, A. Deslattes, R. D. Nielsen, L. Arif, M. J Res Natl Inst Stand Technol Article The lattice spacing comparator established at the National Institute of Standards and Technology to measure the lattice spacing differences between nearly perfect crystals is described in detail. Lattice spacing differences are inferred from the measured differences in Bragg angles for different crystals. The comparator is a two crystal spectrometer used in the nearly nondispersive geometry. It has two x-ray sources, two detectors, and a device which permits remote interchange of the second crystal sample. A sensitive heterodyne interferometer which is calibrated with an optical polygon is used to measure the Bragg angles. The crystals are manufactured with nearly equal thicknesses so that the recorded profiles exhibit pendellosung oscillations which permit more precise division of the x-ray profiles. The difference in lattice spacing between silicon samples used at Physikalisch-Technische Bundesanstalt (PTB) and NIST has been measured with a relative uncertainly of 1 × 10(−8), This measurement is consistent with absolute lattice spacing measurements made at PTB and NIST. Components of uncertainty associated with systematic effects due to misalignments are derived and estimated. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1994 /pmc/articles/PMC8345253/ /pubmed/37404357 http://dx.doi.org/10.6028/jres.099.002 Text en https://creativecommons.org/publicdomain/zero/1.0/The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright. |
spellingShingle | Article Kessler, E. G. Henins, A. Deslattes, R. D. Nielsen, L. Arif, M. Precision Comparison of the Lattice Parameters of Silicon Monocrystals |
title | Precision Comparison of the Lattice Parameters of Silicon Monocrystals |
title_full | Precision Comparison of the Lattice Parameters of Silicon Monocrystals |
title_fullStr | Precision Comparison of the Lattice Parameters of Silicon Monocrystals |
title_full_unstemmed | Precision Comparison of the Lattice Parameters of Silicon Monocrystals |
title_short | Precision Comparison of the Lattice Parameters of Silicon Monocrystals |
title_sort | precision comparison of the lattice parameters of silicon monocrystals |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8345253/ https://www.ncbi.nlm.nih.gov/pubmed/37404357 http://dx.doi.org/10.6028/jres.099.002 |
work_keys_str_mv | AT kesslereg precisioncomparisonofthelatticeparametersofsiliconmonocrystals AT heninsa precisioncomparisonofthelatticeparametersofsiliconmonocrystals AT deslattesrd precisioncomparisonofthelatticeparametersofsiliconmonocrystals AT nielsenl precisioncomparisonofthelatticeparametersofsiliconmonocrystals AT arifm precisioncomparisonofthelatticeparametersofsiliconmonocrystals |