Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays

Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance character...

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Autores principales: Kim, Jaeyeon, Lee, Jimin, Kang, Minkyu, Sohn, Hyunchul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8353047/
https://www.ncbi.nlm.nih.gov/pubmed/34370092
http://dx.doi.org/10.1186/s11671-021-03585-0
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author Kim, Jaeyeon
Lee, Jimin
Kang, Minkyu
Sohn, Hyunchul
author_facet Kim, Jaeyeon
Lee, Jimin
Kang, Minkyu
Sohn, Hyunchul
author_sort Kim, Jaeyeon
collection PubMed
description Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga(2)Te(3) selector was investigated in terms of selectivity and endurance. The Ag-Ga(2)Te(3) selector exhibited a high selectivity of 10(8) with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 10(9) cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga(2)Te(3) selector is a promising candidate for applications in cross-point array structures.
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spelling pubmed-83530472021-08-25 Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays Kim, Jaeyeon Lee, Jimin Kang, Minkyu Sohn, Hyunchul Nanoscale Res Lett Nano Express Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga(2)Te(3) selector was investigated in terms of selectivity and endurance. The Ag-Ga(2)Te(3) selector exhibited a high selectivity of 10(8) with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 10(9) cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga(2)Te(3) selector is a promising candidate for applications in cross-point array structures. Springer US 2021-08-09 /pmc/articles/PMC8353047/ /pubmed/34370092 http://dx.doi.org/10.1186/s11671-021-03585-0 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Kim, Jaeyeon
Lee, Jimin
Kang, Minkyu
Sohn, Hyunchul
Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
title Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
title_full Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
title_fullStr Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
title_full_unstemmed Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
title_short Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
title_sort threshold switching of ag-ga(2)te(3) selector with high endurance for applications to cross-point arrays
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8353047/
https://www.ncbi.nlm.nih.gov/pubmed/34370092
http://dx.doi.org/10.1186/s11671-021-03585-0
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AT kangminkyu thresholdswitchingofagga2te3selectorwithhighenduranceforapplicationstocrosspointarrays
AT sohnhyunchul thresholdswitchingofagga2te3selectorwithhighenduranceforapplicationstocrosspointarrays

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