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High hole mobility in physical vapour deposition-grown tellurium-based transistors
Carrier mobility is one of most important figures of merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted to the mobility improvement of two-dimensional (2D) materials regarded as promising candidates to complemen...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8355690/ https://www.ncbi.nlm.nih.gov/pubmed/34430047 http://dx.doi.org/10.1098/rsos.210554 |