Cargando…
Doped metasurfaces: Etched structure-free flims based on regular spatially doped semiconductor and compatible with general optical ones
The metasurfaces through the reasonable design and arrangement of subwavelength nanostructures to control the spatial light field are expected to replace the traditional lens elements. However, the low light use efficiency (LUE) and difficulty in preparation caused by the etching process restrict th...
Autores principales: | Jin, Ke, Ding, Ying, Cheng, Lu, Qi, Hongsheng, Zheng, Wei |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8358693/ https://www.ncbi.nlm.nih.gov/pubmed/34401681 http://dx.doi.org/10.1016/j.isci.2021.102907 |
Ejemplares similares
-
Heavily doped semiconductors
por: Fistul’, Victor I
Publicado: (1995) -
Noble-metal-free plasmonic photocatalyst: hydrogen doped semiconductors
por: Ma, Xiangchao, et al.
Publicado: (2014) -
Electronic properties of doped semiconductors
por: Shklovskii, Boris I, et al.
Publicado: (1984) -
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)
por: Sombrio, Guilherme, et al.
Publicado: (2021) -
Ultrafast all-optical tuning of direct-gap semiconductor metasurfaces
por: Shcherbakov, Maxim R., et al.
Publicado: (2017)