Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography

The electron-induced chemistry of a resist material for extreme ultraviolet lithography (EUVL) consisting of Zn oxoclusters with methacrylate (MA) and trifluoroacetate (TFA) ligands (Zn(MA)(TFA)) has been studied. Electron energies of 80 eV and 20 eV mimic the effect of photoelectrons released by th...

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Detalles Bibliográficos
Autores principales: Rohdenburg, Markus, Thakur, Neha, Cartaya, René, Castellanos, Sonia, Swiderek, Petra
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8359932/
https://www.ncbi.nlm.nih.gov/pubmed/34323899
http://dx.doi.org/10.1039/d1cp02334a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8359932/
https://www.ncbi.nlm.nih.gov/pubmed/34323899
http://dx.doi.org/10.1039/d1cp02334a

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