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Out-of-Plane Dielectric Susceptibility of Graphene in Twistronic and Bernal Bilayers

[Image: see text] We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene—both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously publ...

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Detalles Bibliográficos
Autores principales: Slizovskiy, Sergey, Garcia-Ruiz, Aitor, Berdyugin, Alexey I., Xin, Na, Taniguchi, Takashi, Watanabe, Kenji, Geim, Andre K., Drummond, Neil D., Fal’ko, Vladimir I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8361429/
https://www.ncbi.nlm.nih.gov/pubmed/34296602
http://dx.doi.org/10.1021/acs.nanolett.1c02211
Descripción
Sumario:[Image: see text] We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene—both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability α(exp) = 10.8 Å(3) and effective out-of-plane dielectric susceptibility ϵ(z) = 2.5, including their on-layer electron density distribution at zero magnetic field and the interlayer Landau level pinning at quantizing magnetic fields.