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Single-electron spin resonance in a nanoelectronic device using a global field

Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upward of...

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Detalles Bibliográficos
Autores principales: Vahapoglu, Ensar, Slack-Smith, James P., Leon, Ross C. C., Lim, Wee Han, Hudson, Fay E., Day, Tom, Tanttu, Tuomo, Yang, Chih Hwan, Laucht, Arne, Dzurak, Andrew S., Pla, Jarryd J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8363148/
https://www.ncbi.nlm.nih.gov/pubmed/34389538
http://dx.doi.org/10.1126/sciadv.abg9158
Descripción
Sumario:Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upward of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here, we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique uses only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control.