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Single-electron spin resonance in a nanoelectronic device using a global field
Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upward of...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8363148/ https://www.ncbi.nlm.nih.gov/pubmed/34389538 http://dx.doi.org/10.1126/sciadv.abg9158 |
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author | Vahapoglu, Ensar Slack-Smith, James P. Leon, Ross C. C. Lim, Wee Han Hudson, Fay E. Day, Tom Tanttu, Tuomo Yang, Chih Hwan Laucht, Arne Dzurak, Andrew S. Pla, Jarryd J. |
author_facet | Vahapoglu, Ensar Slack-Smith, James P. Leon, Ross C. C. Lim, Wee Han Hudson, Fay E. Day, Tom Tanttu, Tuomo Yang, Chih Hwan Laucht, Arne Dzurak, Andrew S. Pla, Jarryd J. |
author_sort | Vahapoglu, Ensar |
collection | PubMed |
description | Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upward of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here, we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique uses only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control. |
format | Online Article Text |
id | pubmed-8363148 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-83631482021-08-20 Single-electron spin resonance in a nanoelectronic device using a global field Vahapoglu, Ensar Slack-Smith, James P. Leon, Ross C. C. Lim, Wee Han Hudson, Fay E. Day, Tom Tanttu, Tuomo Yang, Chih Hwan Laucht, Arne Dzurak, Andrew S. Pla, Jarryd J. Sci Adv Research Articles Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upward of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here, we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique uses only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control. American Association for the Advancement of Science 2021-08-13 /pmc/articles/PMC8363148/ /pubmed/34389538 http://dx.doi.org/10.1126/sciadv.abg9158 Text en Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Vahapoglu, Ensar Slack-Smith, James P. Leon, Ross C. C. Lim, Wee Han Hudson, Fay E. Day, Tom Tanttu, Tuomo Yang, Chih Hwan Laucht, Arne Dzurak, Andrew S. Pla, Jarryd J. Single-electron spin resonance in a nanoelectronic device using a global field |
title | Single-electron spin resonance in a nanoelectronic device using a global field |
title_full | Single-electron spin resonance in a nanoelectronic device using a global field |
title_fullStr | Single-electron spin resonance in a nanoelectronic device using a global field |
title_full_unstemmed | Single-electron spin resonance in a nanoelectronic device using a global field |
title_short | Single-electron spin resonance in a nanoelectronic device using a global field |
title_sort | single-electron spin resonance in a nanoelectronic device using a global field |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8363148/ https://www.ncbi.nlm.nih.gov/pubmed/34389538 http://dx.doi.org/10.1126/sciadv.abg9158 |
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