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Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8367840/ https://www.ncbi.nlm.nih.gov/pubmed/34430811 http://dx.doi.org/10.1016/j.isci.2021.102921 |
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author | Lee, Yonghwan Gupta, Bikesh Tan, Hark Hoe Jagadish, Chennupati Oh, Jihun Karuturi, Siva |
author_facet | Lee, Yonghwan Gupta, Bikesh Tan, Hark Hoe Jagadish, Chennupati Oh, Jihun Karuturi, Siva |
author_sort | Lee, Yonghwan |
collection | PubMed |
description | Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 μm thickness are demonstrated by incorporating a nickel oxide (NiO(x)) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn(+) junction, to generate a photo-current density of 23.43 mA/cm(2) with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices. |
format | Online Article Text |
id | pubmed-8367840 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Elsevier |
record_format | MEDLINE/PubMed |
spelling | pubmed-83678402021-08-23 Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting Lee, Yonghwan Gupta, Bikesh Tan, Hark Hoe Jagadish, Chennupati Oh, Jihun Karuturi, Siva iScience Article Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 μm thickness are demonstrated by incorporating a nickel oxide (NiO(x)) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn(+) junction, to generate a photo-current density of 23.43 mA/cm(2) with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices. Elsevier 2021-07-30 /pmc/articles/PMC8367840/ /pubmed/34430811 http://dx.doi.org/10.1016/j.isci.2021.102921 Text en © 2021 The Author(s) https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lee, Yonghwan Gupta, Bikesh Tan, Hark Hoe Jagadish, Chennupati Oh, Jihun Karuturi, Siva Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
title | Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
title_full | Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
title_fullStr | Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
title_full_unstemmed | Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
title_short | Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
title_sort | thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8367840/ https://www.ncbi.nlm.nih.gov/pubmed/34430811 http://dx.doi.org/10.1016/j.isci.2021.102921 |
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