Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)

Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μ(e)*...

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Autores principales: Janus, Krzysztof, Danielewicz, Kinga, Chlebosz, Dorota, Goldeman, Waldemar, Kiersnowski, Adam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8375403/
https://www.ncbi.nlm.nih.gov/pubmed/34422763
http://dx.doi.org/10.3389/fchem.2021.703710
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author Janus, Krzysztof
Danielewicz, Kinga
Chlebosz, Dorota
Goldeman, Waldemar
Kiersnowski, Adam
author_facet Janus, Krzysztof
Danielewicz, Kinga
Chlebosz, Dorota
Goldeman, Waldemar
Kiersnowski, Adam
author_sort Janus, Krzysztof
collection PubMed
description Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μ(e)* = 5 × 10(–4) cm(2)×(Vs)(−1)]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μ(h)* = 0.9 × 10(–4) cm(2)×(Vs)(−1)]. Due to the chemical nature and energy levels, the hole transport was not expected for NDIC8-based system. Polarized optical- and scanning electron microscopies indicated that the solvent vapor annealing of the NDIC8:P3HT films caused a transition of their fine-grained morphology to the network of branched, dendritic crystallites. Grazing incidence wide-angle X-ray scattering studies indicated that the above transition was accompanied by a change in the crystal structure of NDIC8. The isotropic crystal structure of NDIC8 in the untreated film was identical to the known crystal structure of the bulk NDIC8. After the solvent annealing the crystal structure of NDIC8 changed to a not-yet-reported polymorph, that, unlike in the untreated film, was partially oriented with respect to the OFET substrate.
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spelling pubmed-83754032021-08-20 Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene) Janus, Krzysztof Danielewicz, Kinga Chlebosz, Dorota Goldeman, Waldemar Kiersnowski, Adam Front Chem Chemistry Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μ(e)* = 5 × 10(–4) cm(2)×(Vs)(−1)]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μ(h)* = 0.9 × 10(–4) cm(2)×(Vs)(−1)]. Due to the chemical nature and energy levels, the hole transport was not expected for NDIC8-based system. Polarized optical- and scanning electron microscopies indicated that the solvent vapor annealing of the NDIC8:P3HT films caused a transition of their fine-grained morphology to the network of branched, dendritic crystallites. Grazing incidence wide-angle X-ray scattering studies indicated that the above transition was accompanied by a change in the crystal structure of NDIC8. The isotropic crystal structure of NDIC8 in the untreated film was identical to the known crystal structure of the bulk NDIC8. After the solvent annealing the crystal structure of NDIC8 changed to a not-yet-reported polymorph, that, unlike in the untreated film, was partially oriented with respect to the OFET substrate. Frontiers Media S.A. 2021-08-05 /pmc/articles/PMC8375403/ /pubmed/34422763 http://dx.doi.org/10.3389/fchem.2021.703710 Text en Copyright © 2021 Janus, Danielewicz, Chlebosz, Goldeman and Kiersnowski. https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
spellingShingle Chemistry
Janus, Krzysztof
Danielewicz, Kinga
Chlebosz, Dorota
Goldeman, Waldemar
Kiersnowski, Adam
Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
title Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
title_full Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
title_fullStr Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
title_full_unstemmed Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
title_short Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
title_sort electron-to hole transport change induced by solvent vapor annealing of naphthalene diimide doped with poly(3-hexylthiophene)
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8375403/
https://www.ncbi.nlm.nih.gov/pubmed/34422763
http://dx.doi.org/10.3389/fchem.2021.703710
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