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Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device
In this study, a gate-stack engineering technique is proposed as a means of improving the performance of a 28 nm low-power (LP) high-k/metal-gate (HK/MG) device. In detail, it was experimentally verified that HfSiO thin films can replace HfSiON congeners, where the latter are known to have a good th...
Autores principales: | Park, Jeewon, Jang, Wansu, Shin, Changhwan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398063/ https://www.ncbi.nlm.nih.gov/pubmed/34442508 http://dx.doi.org/10.3390/mi12080886 |
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