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Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory
The multilevel per cell technology and continued scaling down process technology significantly improves the storage density of NAND flash memory but also brings about a challenge in that data reliability degrades due to the serious noise. To ensure the data reliability, many noise mitigation technol...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398337/ https://www.ncbi.nlm.nih.gov/pubmed/34442501 http://dx.doi.org/10.3390/mi12080879 |