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Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP(2)S(6)/MoS(2) Van Der Waals Heterojunction
Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors. However, with the emergence of ferroelectric materials, this problem is expected to be solved. Herein, we demonstrate an OR logic ferr...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400550/ https://www.ncbi.nlm.nih.gov/pubmed/34443802 http://dx.doi.org/10.3390/nano11081971 |