Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-...

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Detalles Bibliográficos
Autores principales: Fedorov, Vladimir V., Berdnikov, Yury, Sibirev, Nickolay V., Bolshakov, Alexey D., Fedina, Sergey V., Sapunov, Georgiy A., Dvoretckaia, Liliia N., Cirlin, George, Kirilenko, Demid A., Tchernycheva, Maria, Mukhin, Ivan S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400893/
https://www.ncbi.nlm.nih.gov/pubmed/34443778
http://dx.doi.org/10.3390/nano11081949

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400893/
https://www.ncbi.nlm.nih.gov/pubmed/34443778
http://dx.doi.org/10.3390/nano11081949

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