Cargando…
High-Quality Single-Crystalline β-Ga(2)O(3) Nanowires: Synthesis to Nonvolatile Memory Applications
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a n...
Autores principales: | Sivakumar, Chandrasekar, Tsai, Gang-Han, Chung, Pei-Fang, Balraj, Babu, Lin, Yen-Fu, Ho, Mon-Shu |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401975/ https://www.ncbi.nlm.nih.gov/pubmed/34443844 http://dx.doi.org/10.3390/nano11082013 |
Ejemplares similares
-
Ag-Decorated Vertically Aligned ZnO Nanorods for Non-Enzymatic Glucose Sensor Applications
por: Lin, Yu-Hsuan, et al.
Publicado: (2023) -
Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
por: Su, Meng, et al.
Publicado: (2016) -
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
por: Su, Chun-Jung, et al.
Publicado: (2012) -
Overview of emerging nonvolatile memory technologies
por: Meena, Jagan Singh, et al.
Publicado: (2014) -
A multilevel nonvolatile magnetoelectric memory
por: Shen, Jianxin, et al.
Publicado: (2016)