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Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and positi...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8410817/ https://www.ncbi.nlm.nih.gov/pubmed/34471184 http://dx.doi.org/10.1038/s41598-021-97048-2 |
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author | Yoo, Dongha Lee, Keundong Tchoe, Youngbin Guha, Puspendu Ali, Asad Saroj, Rajendra K. Lee, Seokje Islam, A. B. M. Hamidul Kim, Miyoung Yi, Gyu-Chul |
author_facet | Yoo, Dongha Lee, Keundong Tchoe, Youngbin Guha, Puspendu Ali, Asad Saroj, Rajendra K. Lee, Seokje Islam, A. B. M. Hamidul Kim, Miyoung Yi, Gyu-Chul |
author_sort | Yoo, Dongha |
collection | PubMed |
description | This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing In(x)Ga(1−x)N/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution. |
format | Online Article Text |
id | pubmed-8410817 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-84108172021-09-03 Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications Yoo, Dongha Lee, Keundong Tchoe, Youngbin Guha, Puspendu Ali, Asad Saroj, Rajendra K. Lee, Seokje Islam, A. B. M. Hamidul Kim, Miyoung Yi, Gyu-Chul Sci Rep Article This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing In(x)Ga(1−x)N/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution. Nature Publishing Group UK 2021-09-01 /pmc/articles/PMC8410817/ /pubmed/34471184 http://dx.doi.org/10.1038/s41598-021-97048-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Yoo, Dongha Lee, Keundong Tchoe, Youngbin Guha, Puspendu Ali, Asad Saroj, Rajendra K. Lee, Seokje Islam, A. B. M. Hamidul Kim, Miyoung Yi, Gyu-Chul Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications |
title | Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications |
title_full | Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications |
title_fullStr | Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications |
title_full_unstemmed | Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications |
title_short | Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications |
title_sort | dimension- and position-controlled growth of gan microstructure arrays on graphene films for flexible device applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8410817/ https://www.ncbi.nlm.nih.gov/pubmed/34471184 http://dx.doi.org/10.1038/s41598-021-97048-2 |
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