Cargando…
MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors
A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electr...
Autores principales: | Luo, Lingzhi, Huang, Yixuan, Cheng, Keming, Alhassan, Abdullah, Alqahtani, Mahdi, Tang, Libin, Wang, Zhiming, Wu, Jiang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8410839/ https://www.ncbi.nlm.nih.gov/pubmed/34471092 http://dx.doi.org/10.1038/s41377-021-00619-1 |
Ejemplares similares
-
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
por: Zhu, Wenkai, et al.
Publicado: (2023) -
Van der Waals two-color infrared photodetector
por: Wu, Peisong, et al.
Publicado: (2022) -
High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier
por: Lin, Di, et al.
Publicado: (2022) -
Paper-based broadband flexible photodetectors with van der Waals materials
por: Mahmoodi, Erfan, et al.
Publicado: (2022) -
Supercurrent in van der Waals Josephson junction
por: Yabuki, Naoto, et al.
Publicado: (2016)