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Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field

[Image: see text] Lightweight two-dimensional materials are being studied for hydrogen storage applications due to their large surface area. The characteristics of hydrogen adsorption on the h-BN bilayer under the applied electric field were investigated. The overall storage capacity of the bilayer...

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Autores principales: Chettri, Bhanu, Patra, Prasanta Kumar, Srivastava, Sunita, Laref, Amel, Rai, Dibya Prakash
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8412961/
https://www.ncbi.nlm.nih.gov/pubmed/34497926
http://dx.doi.org/10.1021/acsomega.1c03154
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author Chettri, Bhanu
Patra, Prasanta Kumar
Srivastava, Sunita
Laref, Amel
Rai, Dibya Prakash
author_facet Chettri, Bhanu
Patra, Prasanta Kumar
Srivastava, Sunita
Laref, Amel
Rai, Dibya Prakash
author_sort Chettri, Bhanu
collection PubMed
description [Image: see text] Lightweight two-dimensional materials are being studied for hydrogen storage applications due to their large surface area. The characteristics of hydrogen adsorption on the h-BN bilayer under the applied electric field were investigated. The overall storage capacity of the bilayer is 6.7 wt % from our theoretical calculation with E(ads) of 0.223 eV/H(2). The desorption temperature to remove the adsorbed H(2) molecules from the surface of the h-BN bilayer system in the absence of an external electric field is found to be ∼176 K. With the introduction of an external electric field, the E(ads) lies in the range of 0.223–0.846 eV/H(2) and the desorption temperature is from 176 to 668 K. Our results show that the external electric field enhances the average adsorption energy as well as the desorption temperature and thus makes the h-BN bilayer a promising candidate for hydrogen storage.
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spelling pubmed-84129612021-09-07 Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field Chettri, Bhanu Patra, Prasanta Kumar Srivastava, Sunita Laref, Amel Rai, Dibya Prakash ACS Omega [Image: see text] Lightweight two-dimensional materials are being studied for hydrogen storage applications due to their large surface area. The characteristics of hydrogen adsorption on the h-BN bilayer under the applied electric field were investigated. The overall storage capacity of the bilayer is 6.7 wt % from our theoretical calculation with E(ads) of 0.223 eV/H(2). The desorption temperature to remove the adsorbed H(2) molecules from the surface of the h-BN bilayer system in the absence of an external electric field is found to be ∼176 K. With the introduction of an external electric field, the E(ads) lies in the range of 0.223–0.846 eV/H(2) and the desorption temperature is from 176 to 668 K. Our results show that the external electric field enhances the average adsorption energy as well as the desorption temperature and thus makes the h-BN bilayer a promising candidate for hydrogen storage. American Chemical Society 2021-08-20 /pmc/articles/PMC8412961/ /pubmed/34497926 http://dx.doi.org/10.1021/acsomega.1c03154 Text en © 2021 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Chettri, Bhanu
Patra, Prasanta Kumar
Srivastava, Sunita
Laref, Amel
Rai, Dibya Prakash
Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field
title Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field
title_full Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field
title_fullStr Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field
title_full_unstemmed Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field
title_short Enhanced H(2) Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field
title_sort enhanced h(2) storage capacity of bilayer hexagonal boron nitride (h-bn) incorporating van der waals interaction under an applied external electric field
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8412961/
https://www.ncbi.nlm.nih.gov/pubmed/34497926
http://dx.doi.org/10.1021/acsomega.1c03154
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