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Low motional impedance distributed Lamé mode resonators for high frequency timing applications

This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with...

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Autores principales: Daruwalla, Anosh, Wen, Haoran, Liu, Chang-Shun, Ayazi, Farrokh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433430/
https://www.ncbi.nlm.nih.gov/pubmed/34567664
http://dx.doi.org/10.1038/s41378-020-0157-z
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author Daruwalla, Anosh
Wen, Haoran
Liu, Chang-Shun
Ayazi, Farrokh
author_facet Daruwalla, Anosh
Wen, Haoran
Liu, Chang-Shun
Ayazi, Farrokh
author_sort Daruwalla, Anosh
collection PubMed
description This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with high efficiency nano-gap capacitive transduction, it enables low motional impedances while scaling the frequency to VHF range. The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications. Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k, motional impedances <1 kΩ, and high-temperature frequency turnover points >90 °C in the VHF range, and are fabricated using a wafer-level-packaged HARPSS process. Packaged devices show excellent robustness against temperature cycling, device thinning, and aging effects, which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications.
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spelling pubmed-84334302021-09-24 Low motional impedance distributed Lamé mode resonators for high frequency timing applications Daruwalla, Anosh Wen, Haoran Liu, Chang-Shun Ayazi, Farrokh Microsyst Nanoeng Article This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with high efficiency nano-gap capacitive transduction, it enables low motional impedances while scaling the frequency to VHF range. The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications. Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k, motional impedances <1 kΩ, and high-temperature frequency turnover points >90 °C in the VHF range, and are fabricated using a wafer-level-packaged HARPSS process. Packaged devices show excellent robustness against temperature cycling, device thinning, and aging effects, which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications. Nature Publishing Group UK 2020-06-15 /pmc/articles/PMC8433430/ /pubmed/34567664 http://dx.doi.org/10.1038/s41378-020-0157-z Text en © The Author(s) 2020 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Daruwalla, Anosh
Wen, Haoran
Liu, Chang-Shun
Ayazi, Farrokh
Low motional impedance distributed Lamé mode resonators for high frequency timing applications
title Low motional impedance distributed Lamé mode resonators for high frequency timing applications
title_full Low motional impedance distributed Lamé mode resonators for high frequency timing applications
title_fullStr Low motional impedance distributed Lamé mode resonators for high frequency timing applications
title_full_unstemmed Low motional impedance distributed Lamé mode resonators for high frequency timing applications
title_short Low motional impedance distributed Lamé mode resonators for high frequency timing applications
title_sort low motional impedance distributed lamé mode resonators for high frequency timing applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433430/
https://www.ncbi.nlm.nih.gov/pubmed/34567664
http://dx.doi.org/10.1038/s41378-020-0157-z
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