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Low motional impedance distributed Lamé mode resonators for high frequency timing applications
This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433430/ https://www.ncbi.nlm.nih.gov/pubmed/34567664 http://dx.doi.org/10.1038/s41378-020-0157-z |
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author | Daruwalla, Anosh Wen, Haoran Liu, Chang-Shun Ayazi, Farrokh |
author_facet | Daruwalla, Anosh Wen, Haoran Liu, Chang-Shun Ayazi, Farrokh |
author_sort | Daruwalla, Anosh |
collection | PubMed |
description | This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with high efficiency nano-gap capacitive transduction, it enables low motional impedances while scaling the frequency to VHF range. The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications. Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k, motional impedances <1 kΩ, and high-temperature frequency turnover points >90 °C in the VHF range, and are fabricated using a wafer-level-packaged HARPSS process. Packaged devices show excellent robustness against temperature cycling, device thinning, and aging effects, which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications. |
format | Online Article Text |
id | pubmed-8433430 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-84334302021-09-24 Low motional impedance distributed Lamé mode resonators for high frequency timing applications Daruwalla, Anosh Wen, Haoran Liu, Chang-Shun Ayazi, Farrokh Microsyst Nanoeng Article This paper presents a novel high-Q silicon distributed Lamé mode resonator (DLR) for VHF timing reference applications. The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamé modes in beam or frame configurations with increased transduction area. Combined with high efficiency nano-gap capacitive transduction, it enables low motional impedances while scaling the frequency to VHF range. The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications. Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k, motional impedances <1 kΩ, and high-temperature frequency turnover points >90 °C in the VHF range, and are fabricated using a wafer-level-packaged HARPSS process. Packaged devices show excellent robustness against temperature cycling, device thinning, and aging effects, which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications. Nature Publishing Group UK 2020-06-15 /pmc/articles/PMC8433430/ /pubmed/34567664 http://dx.doi.org/10.1038/s41378-020-0157-z Text en © The Author(s) 2020 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Daruwalla, Anosh Wen, Haoran Liu, Chang-Shun Ayazi, Farrokh Low motional impedance distributed Lamé mode resonators for high frequency timing applications |
title | Low motional impedance distributed Lamé mode resonators for high frequency timing applications |
title_full | Low motional impedance distributed Lamé mode resonators for high frequency timing applications |
title_fullStr | Low motional impedance distributed Lamé mode resonators for high frequency timing applications |
title_full_unstemmed | Low motional impedance distributed Lamé mode resonators for high frequency timing applications |
title_short | Low motional impedance distributed Lamé mode resonators for high frequency timing applications |
title_sort | low motional impedance distributed lamé mode resonators for high frequency timing applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433430/ https://www.ncbi.nlm.nih.gov/pubmed/34567664 http://dx.doi.org/10.1038/s41378-020-0157-z |
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