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Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route ba...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433433/ https://www.ncbi.nlm.nih.gov/pubmed/34567746 http://dx.doi.org/10.1038/s41378-021-00257-y |
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author | Yulianto, Nursidik Refino, Andam Deatama Syring, Alina Majid, Nurhalis Mariana, Shinta Schnell, Patrick Wahyuono, Ruri Agung Triyana, Kuwat Meierhofer, Florian Daum, Winfried Abdi, Fatwa F. Voss, Tobias Wasisto, Hutomo Suryo Waag, Andreas |
author_facet | Yulianto, Nursidik Refino, Andam Deatama Syring, Alina Majid, Nurhalis Mariana, Shinta Schnell, Patrick Wahyuono, Ruri Agung Triyana, Kuwat Meierhofer, Florian Daum, Winfried Abdi, Fatwa F. Voss, Tobias Wasisto, Hutomo Suryo Waag, Andreas |
author_sort | Yulianto, Nursidik |
collection | PubMed |
description | The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~10(7) wires/cm(2)), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required). |
format | Online Article Text |
id | pubmed-8433433 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-84334332021-09-24 Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique Yulianto, Nursidik Refino, Andam Deatama Syring, Alina Majid, Nurhalis Mariana, Shinta Schnell, Patrick Wahyuono, Ruri Agung Triyana, Kuwat Meierhofer, Florian Daum, Winfried Abdi, Fatwa F. Voss, Tobias Wasisto, Hutomo Suryo Waag, Andreas Microsyst Nanoeng Article The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~10(7) wires/cm(2)), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required). Nature Publishing Group UK 2021-04-23 /pmc/articles/PMC8433433/ /pubmed/34567746 http://dx.doi.org/10.1038/s41378-021-00257-y Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Yulianto, Nursidik Refino, Andam Deatama Syring, Alina Majid, Nurhalis Mariana, Shinta Schnell, Patrick Wahyuono, Ruri Agung Triyana, Kuwat Meierhofer, Florian Daum, Winfried Abdi, Fatwa F. Voss, Tobias Wasisto, Hutomo Suryo Waag, Andreas Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique |
title | Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique |
title_full | Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique |
title_fullStr | Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique |
title_full_unstemmed | Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique |
title_short | Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique |
title_sort | wafer-scale transfer route for top–down iii-nitride nanowire led arrays based on the femtosecond laser lift-off technique |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433433/ https://www.ncbi.nlm.nih.gov/pubmed/34567746 http://dx.doi.org/10.1038/s41378-021-00257-y |
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