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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains...

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Autores principales: Kuchuk, Andrian V., de Oliveira, Fernando M., Ghosh, Pijush K., Mazur, Yuriy I., Stanchu, Hryhorii V., Teodoro, Marcio D., Ware, Morgan E., Salamo, Gregory J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Tsinghua University Press 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8436015/
https://www.ncbi.nlm.nih.gov/pubmed/34540143
http://dx.doi.org/10.1007/s12274-021-3855-4
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author Kuchuk, Andrian V.
de Oliveira, Fernando M.
Ghosh, Pijush K.
Mazur, Yuriy I.
Stanchu, Hryhorii V.
Teodoro, Marcio D.
Ware, Morgan E.
Salamo, Gregory J.
author_facet Kuchuk, Andrian V.
de Oliveira, Fernando M.
Ghosh, Pijush K.
Mazur, Yuriy I.
Stanchu, Hryhorii V.
Teodoro, Marcio D.
Ware, Morgan E.
Salamo, Gregory J.
author_sort Kuchuk, Andrian V.
collection PubMed
description Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN. Importantly, we found that the discrepancy between the experimental values of strain and those calculated via Raman spectroscopy increases as the strain in both GaN and AlN increases. Herein, a new model has been developed to describe the strain-induced Raman frequency shift in GaN and AlN for a wide range of biaxial strains (up to 2.5%). Finally, we proposed a new approach to correlate the Raman frequency shift and strain, which is based on the lattice coherency in the epitaxial layers of superlattice structures and can be used for a wide range of materials. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: Supplementary material (Table S1: Values of bulk phonon deformation potentials and elastic constants for GaN and AlN from each reference used in Table 1, Fig. S1: Lattice parameters of SL layers using Eq. (8), and Fig. S2: Raman mapping using Eq. (7)) is available in the online version of this article at 10.1007/s12274-021-3855-4.
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spelling pubmed-84360152021-09-13 Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift Kuchuk, Andrian V. de Oliveira, Fernando M. Ghosh, Pijush K. Mazur, Yuriy I. Stanchu, Hryhorii V. Teodoro, Marcio D. Ware, Morgan E. Salamo, Gregory J. Nano Res Research Article Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN. Importantly, we found that the discrepancy between the experimental values of strain and those calculated via Raman spectroscopy increases as the strain in both GaN and AlN increases. Herein, a new model has been developed to describe the strain-induced Raman frequency shift in GaN and AlN for a wide range of biaxial strains (up to 2.5%). Finally, we proposed a new approach to correlate the Raman frequency shift and strain, which is based on the lattice coherency in the epitaxial layers of superlattice structures and can be used for a wide range of materials. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: Supplementary material (Table S1: Values of bulk phonon deformation potentials and elastic constants for GaN and AlN from each reference used in Table 1, Fig. S1: Lattice parameters of SL layers using Eq. (8), and Fig. S2: Raman mapping using Eq. (7)) is available in the online version of this article at 10.1007/s12274-021-3855-4. Tsinghua University Press 2021-09-13 2022 /pmc/articles/PMC8436015/ /pubmed/34540143 http://dx.doi.org/10.1007/s12274-021-3855-4 Text en © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021 This article is made available via the PMC Open Access Subset for unrestricted research re-use and secondary analysis in any form or by any means with acknowledgement of the original source. These permissions are granted for the duration of the World Health Organization (WHO) declaration of COVID-19 as a global pandemic.
spellingShingle Research Article
Kuchuk, Andrian V.
de Oliveira, Fernando M.
Ghosh, Pijush K.
Mazur, Yuriy I.
Stanchu, Hryhorii V.
Teodoro, Marcio D.
Ware, Morgan E.
Salamo, Gregory J.
Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
title Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
title_full Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
title_fullStr Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
title_full_unstemmed Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
title_short Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
title_sort coherent-interface-induced strain in large lattice-mismatched materials: a new approach for modeling raman shift
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8436015/
https://www.ncbi.nlm.nih.gov/pubmed/34540143
http://dx.doi.org/10.1007/s12274-021-3855-4
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