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Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces
Lateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide (PtSe(2)), are promising options for the fabrication of efficient two-dimensional field-effect transistors (FETs), by exploiting the dependence of the energy g...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8446074/ https://www.ncbi.nlm.nih.gov/pubmed/34531506 http://dx.doi.org/10.1038/s41598-021-98080-y |
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author | Calogero, Gaetano Marian, Damiano Marin, Enrique G. Fiori, Gianluca Iannaccone, Giuseppe |
author_facet | Calogero, Gaetano Marian, Damiano Marin, Enrique G. Fiori, Gianluca Iannaccone, Giuseppe |
author_sort | Calogero, Gaetano |
collection | PubMed |
description | Lateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide (PtSe(2)), are promising options for the fabrication of efficient two-dimensional field-effect transistors (FETs), by exploiting the dependence of the energy gap on the number of layers and the intrinsically high quality of the heterojunctions. Key for future progress in this direction is understanding the effects of the physics of the lateral interfaces on far-from-equilibrium transport properties. In this work, a multi-scale approach to device simulation, capable to include ab-initio modelling of the interfaces in a computationally efficient way, is presented. As an application, p- and n-type monolayer-multilayer PtSe(2) LH-FETs are investigated, considering design parameters such as channel length, number of layers and junction quality. The simulations suggest that such transistors can provide high performance in terms of subthreshold characteristics and switching behavior, and that a single channel device is not capable, even in the ballistic defectless limit, to satisfy the requirements of the semiconductor roadmap for the next decade, and that stacked channel devices would be required. It is shown how ab-initio modelling of interfaces provides a reliable physical description of charge displacements in their proximity, which can be crucial to correctly predict device transport properties, especially in presence of strong dipoles, mixed stoichiometries or imperfections. |
format | Online Article Text |
id | pubmed-8446074 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-84460742021-09-21 Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces Calogero, Gaetano Marian, Damiano Marin, Enrique G. Fiori, Gianluca Iannaccone, Giuseppe Sci Rep Article Lateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide (PtSe(2)), are promising options for the fabrication of efficient two-dimensional field-effect transistors (FETs), by exploiting the dependence of the energy gap on the number of layers and the intrinsically high quality of the heterojunctions. Key for future progress in this direction is understanding the effects of the physics of the lateral interfaces on far-from-equilibrium transport properties. In this work, a multi-scale approach to device simulation, capable to include ab-initio modelling of the interfaces in a computationally efficient way, is presented. As an application, p- and n-type monolayer-multilayer PtSe(2) LH-FETs are investigated, considering design parameters such as channel length, number of layers and junction quality. The simulations suggest that such transistors can provide high performance in terms of subthreshold characteristics and switching behavior, and that a single channel device is not capable, even in the ballistic defectless limit, to satisfy the requirements of the semiconductor roadmap for the next decade, and that stacked channel devices would be required. It is shown how ab-initio modelling of interfaces provides a reliable physical description of charge displacements in their proximity, which can be crucial to correctly predict device transport properties, especially in presence of strong dipoles, mixed stoichiometries or imperfections. Nature Publishing Group UK 2021-09-16 /pmc/articles/PMC8446074/ /pubmed/34531506 http://dx.doi.org/10.1038/s41598-021-98080-y Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Calogero, Gaetano Marian, Damiano Marin, Enrique G. Fiori, Gianluca Iannaccone, Giuseppe Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces |
title | Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces |
title_full | Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces |
title_fullStr | Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces |
title_full_unstemmed | Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces |
title_short | Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe(2) via Ab initio modelling of interfaces |
title_sort | physical insights on transistors based on lateral heterostructures of monolayer and multilayer ptse(2) via ab initio modelling of interfaces |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8446074/ https://www.ncbi.nlm.nih.gov/pubmed/34531506 http://dx.doi.org/10.1038/s41598-021-98080-y |
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