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A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization

In this present work, CuNiCoS(4) thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the succe...

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Detalles Bibliográficos
Autores principales: Koçyiğit, Adem, Sarılmaz, Adem, Öztürk, Teoman, Ozel, Faruk, Yıldırım, Murat
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8450951/
https://www.ncbi.nlm.nih.gov/pubmed/34621611
http://dx.doi.org/10.3762/bjnano.12.74
Descripción
Sumario:In this present work, CuNiCoS(4) thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS(4). The obtained CuNiCoS(4) thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS(4)/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS(4) thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.