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A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization
In this present work, CuNiCoS(4) thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the succe...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8450951/ https://www.ncbi.nlm.nih.gov/pubmed/34621611 http://dx.doi.org/10.3762/bjnano.12.74 |
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author | Koçyiğit, Adem Sarılmaz, Adem Öztürk, Teoman Ozel, Faruk Yıldırım, Murat |
author_facet | Koçyiğit, Adem Sarılmaz, Adem Öztürk, Teoman Ozel, Faruk Yıldırım, Murat |
author_sort | Koçyiğit, Adem |
collection | PubMed |
description | In this present work, CuNiCoS(4) thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS(4). The obtained CuNiCoS(4) thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS(4)/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS(4) thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications. |
format | Online Article Text |
id | pubmed-8450951 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-84509512021-10-06 A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization Koçyiğit, Adem Sarılmaz, Adem Öztürk, Teoman Ozel, Faruk Yıldırım, Murat Beilstein J Nanotechnol Full Research Paper In this present work, CuNiCoS(4) thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS(4). The obtained CuNiCoS(4) thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS(4)/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS(4) thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications. Beilstein-Institut 2021-09-02 /pmc/articles/PMC8450951/ /pubmed/34621611 http://dx.doi.org/10.3762/bjnano.12.74 Text en Copyright © 2021, Koçyiğit et al. https://creativecommons.org/licenses/by/4.0/https://www.beilstein-journals.org/bjnano/terms/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0 (https://creativecommons.org/licenses/by/4.0/) ). Please note that the reuse, redistribution and reproduction in particular requires that the author(s) and source are credited and that individual graphics may be subject to special legal provisions. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms/terms) |
spellingShingle | Full Research Paper Koçyiğit, Adem Sarılmaz, Adem Öztürk, Teoman Ozel, Faruk Yıldırım, Murat A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization |
title | A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization |
title_full | A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization |
title_fullStr | A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization |
title_full_unstemmed | A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization |
title_short | A Au/CuNiCoS(4)/p-Si photodiode: electrical and morphological characterization |
title_sort | au/cunicos(4)/p-si photodiode: electrical and morphological characterization |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8450951/ https://www.ncbi.nlm.nih.gov/pubmed/34621611 http://dx.doi.org/10.3762/bjnano.12.74 |
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