Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime

We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures >  ~ 40 K,...

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Autores principales: Iwasaki, Takuya, Moriyama, Satoshi, Ahmad, Nurul Fariha, Komatsu, Katsuyoshi, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka, Hashim, Abdul Manaf, Morita, Yoshifumi, Nakaharai, Shu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8458370/
https://www.ncbi.nlm.nih.gov/pubmed/34552168
http://dx.doi.org/10.1038/s41598-021-98266-4
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author Iwasaki, Takuya
Moriyama, Satoshi
Ahmad, Nurul Fariha
Komatsu, Katsuyoshi
Watanabe, Kenji
Taniguchi, Takashi
Wakayama, Yutaka
Hashim, Abdul Manaf
Morita, Yoshifumi
Nakaharai, Shu
author_facet Iwasaki, Takuya
Moriyama, Satoshi
Ahmad, Nurul Fariha
Komatsu, Katsuyoshi
Watanabe, Kenji
Taniguchi, Takashi
Wakayama, Yutaka
Hashim, Abdul Manaf
Morita, Yoshifumi
Nakaharai, Shu
author_sort Iwasaki, Takuya
collection PubMed
description We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures >  ~ 40 K, whereas it becomes positive for low temperatures ≤  ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO(2), and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.
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spelling pubmed-84583702021-09-24 Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime Iwasaki, Takuya Moriyama, Satoshi Ahmad, Nurul Fariha Komatsu, Katsuyoshi Watanabe, Kenji Taniguchi, Takashi Wakayama, Yutaka Hashim, Abdul Manaf Morita, Yoshifumi Nakaharai, Shu Sci Rep Article We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures >  ~ 40 K, whereas it becomes positive for low temperatures ≤  ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO(2), and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K. Nature Publishing Group UK 2021-09-22 /pmc/articles/PMC8458370/ /pubmed/34552168 http://dx.doi.org/10.1038/s41598-021-98266-4 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Iwasaki, Takuya
Moriyama, Satoshi
Ahmad, Nurul Fariha
Komatsu, Katsuyoshi
Watanabe, Kenji
Taniguchi, Takashi
Wakayama, Yutaka
Hashim, Abdul Manaf
Morita, Yoshifumi
Nakaharai, Shu
Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
title Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
title_full Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
title_fullStr Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
title_full_unstemmed Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
title_short Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
title_sort localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8458370/
https://www.ncbi.nlm.nih.gov/pubmed/34552168
http://dx.doi.org/10.1038/s41598-021-98266-4
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