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Intermediate Cu-O-Si Phase in the Cu-SiO(2)/Si(111) System: Growth, Elemental, and Electrical Studies
[Image: see text] We investigate here the strain-induced growth of Cu at 600 °C and its interactions with a thermally grown, 270 nm-thick SiO(2) layer on the Si(111) substrate. Our results show clear evidence of triangular voids and formation of triangular islands on the surface via a void-filling m...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8459365/ https://www.ncbi.nlm.nih.gov/pubmed/34568662 http://dx.doi.org/10.1021/acsomega.1c02646 |