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Intermediate Cu-O-Si Phase in the Cu-SiO(2)/Si(111) System: Growth, Elemental, and Electrical Studies

[Image: see text] We investigate here the strain-induced growth of Cu at 600 °C and its interactions with a thermally grown, 270 nm-thick SiO(2) layer on the Si(111) substrate. Our results show clear evidence of triangular voids and formation of triangular islands on the surface via a void-filling m...

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Detalles Bibliográficos
Autores principales:	Sreedharan, Reshmi, Mohan, Manu, Saini, Sonia, Roy, Anupam, Bhattacharjee, Kuntala
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8459365/ https://www.ncbi.nlm.nih.gov/pubmed/34568662 http://dx.doi.org/10.1021/acsomega.1c02646

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