Chirality Distributions for Semiconducting Single-Walled Carbon Nanotubes Determined by Photoluminescence Spectroscopy

To realize single-walled carbon nanotube (SWCNT) chiral selective growth, elucidating the mechanism of SWCNT chirality [Formula: see text] selectivity is important. For this purpose, an accurate evaluation method for evaluating the chirality distribution of grown SWCNTs without post-growth processing or liquid-dispersion of SWCNTs is indispensable. Here, we used photoluminescence spectroscopy to directly measure the chirality distributions of individual semiconducting SWCNTs suspended on a pillar-patterned substrate. The number of chirality-assigned SWCNTs was up to 332 and 17 chirality types with the chiral angles ranging from [Formula: see text] to [Formula: see text] were detected. The growth yield of SWCNTs was confirmed to primarily depends on the chiral angle in accordance with the screw dislocation model. Furthermore, when higher-yield chiralities are selected, the chiral angle distribution with a peak corresponding to near-armchair SWCNTs is well fitted with a model that incorporates the thermodynamic effect at the SWCNT-catalyst interface into the kink growth-based kinetic model. Our quantitative and statistical data provide new insights into SWCNT growth mechanism as well as experimental confirmation of theoretical predictions.