Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different...

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Detalles Bibliográficos
Autores principales: Yakimov, Andrew I., Kirienko, Victor V., Bloshkin, Aleksei A., Utkin, Dmitrii E., Dvurechenskii, Anatoly V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8466078/
https://www.ncbi.nlm.nih.gov/pubmed/34578618
http://dx.doi.org/10.3390/nano11092302

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8466078/
https://www.ncbi.nlm.nih.gov/pubmed/34578618
http://dx.doi.org/10.3390/nano11092302

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