Cargando…

Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate

We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpo...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wroński, Piotr Andrzej, Wyborski, Paweł, Musiał, Anna, Podemski, Paweł, Sęk, Grzegorz, Höfling, Sven, Jabeen, Fauzia
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467047/ https://www.ncbi.nlm.nih.gov/pubmed/34576444 http://dx.doi.org/10.3390/ma14185221

Ejemplares similares

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
por: Wyborski, Paweł, et al.
Publicado: (2022)

InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window
por: Wyborski, Paweł, et al.
Publicado: (2021)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
por: Sadofyev, Yuri G., et al.
Publicado: (2010)

Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs
por: Stephen, Nicholas, et al.
Publicado: (2023)

Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires
por: Sadowski, Janusz, et al.
Publicado: (2022)

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs
por: Shin, Ki-Yong, et al.
Publicado: (2023)

Doping Dependent Magnetic Behavior in MBE Grown GaAs(1-x)Sb(x) Nanowires
por: Kumar, Raj, et al.
Publicado: (2020)

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
por: Mari, Riaz H, et al.
Publicado: (2011)

Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns
por: Trisna, Beni Adi, et al.
Publicado: (2015)

Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
por: Lu, Qi, et al.
Publicado: (2019)

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
por: Holewa, Paweł, et al.
Publicado: (2020)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Microstructure of non-polar GaN on LiGaO(2 )grown by plasma-assisted MBE
por: Shih, Cheng-Hung, et al.
Publicado: (2011)

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
por: Koval, Olga Yu., et al.
Publicado: (2021)

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In(x)Al(1–x)Sb Continuously Graded Buffer Layer
por: Kang, Soo Seok, et al.
Publicado: (2018)

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In(x)Al(1–x)Sb Continuously Graded Buffer Layer
por: Kang, Soo Seok, et al.
Publicado: (2018)

InGaAs/InAlAs single photon avalanche diode for 1550 nm photons
por: Meng, Xiao, et al.
Publicado: (2016)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010)

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
por: Niu, Lang, et al.
Publicado: (2011)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
por: Du, Yong, et al.
Publicado: (2022)

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
por: Jiang, Cheng, et al.
Publicado: (2019)

Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top
por: Islam, Samiha Ishrat, et al.
Publicado: (2014)

Anisotropies in strain and quantum efficiency of strained GaAs grown on GaAsP
por: Mair, R W, et al.
Publicado: (1995)

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
por: Olszewski, Karol, et al.
Publicado: (2023)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
por: Shafi, M, et al.
Publicado: (2010)

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
por: Cirlin, GE, et al.
Publicado: (2009)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
por: Zhong, Aihua, et al.
Publicado: (2018)

Low-Temperature In-Induced Holes Formation in Native-SiO(x)/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
por: R. Reznik, Rodion, et al.
Publicado: (2020)

Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting
por: Geng, Biao, et al.
Publicado: (2021)

Temperature-dependent photo-elastic coefficient of silicon at 1550 nm
por: Dickmann, Johannes, et al.
Publicado: (2023)

Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals
por: Petris, Adrian, et al.
Publicado: (2021)

Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm
por: Rao, Sandro, et al.
Publicado: (2022)

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
por: Gutsche, Christoph, et al.
Publicado: (2010)

Fabrication and Characterization of In(0.53)Ga(0.47)As/InAs/In(0.53)Ga(0.47)As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
por: Shin, Seung Heon, et al.
Publicado: (2022)

Absorption Measurements of Periodically Poled Potassium Titanyl Phosphate (PPKTP) at 775 nm and 1550 nm
por: Steinlechner, Jessica, et al.
Publicado: (2013)

Annual GaAs Integrated Circuits Symposium : GaAs IC
por: Madihian, M, et al.
Publicado: (1996)

Hybrid Nanowire–Rectangular Plasmonic Waveguide for Subwavelength Confinement at 1550 Nm
por: Wang, Yindi, et al.
Publicado: (2022)

Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator
por: Yan, Zhao, et al.
Publicado: (2023)

GaAs detectors
por: Beaumont, S P, et al.
Publicado: (1990)

Cannot write session to /tmp/vufind_sessions/sess_gietktdusf5epi648j3llamml3