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Critical Thermodynamic Conditions for the Formation of p-Type β-Ga(2)O(3) with Cu Doping

As a promising third-generation semiconductor, [Formula: see text] is facing bottleneck for its p-type doping. We investigated the electronic structures and the stability of various Cu doped structures of [Formula: see text]. We found that Cu atoms substituting Ga atoms result in p-type conductivity...

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Detalles Bibliográficos
Autores principales:	Zhang, Chuanyu, Li, Zhibing, Wang, Weiliang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8469132/ https://www.ncbi.nlm.nih.gov/pubmed/34576382 http://dx.doi.org/10.3390/ma14185161

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