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An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-type doped region on the performance parameters is st...

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Detalles Bibliográficos
Autores principales:	Jia, Hujun, Wang, Xiaowei, Dong, Mengyu, Zhu, Shunwei, Yang, Yintang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8469289/ https://www.ncbi.nlm.nih.gov/pubmed/34577679 http://dx.doi.org/10.3390/mi12091035

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