Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ(PL)), and electron spin relaxation times (τ(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular be...

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Detalles Bibliográficos
Autores principales: Iba, Satoshi, Okamoto, Ryogo, Obu, Koki, Obata, Yuma, Ohno, Yuzo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8469624/
https://www.ncbi.nlm.nih.gov/pubmed/34577755
http://dx.doi.org/10.3390/mi12091112
Descripción
Sumario:We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ(PL)), and electron spin relaxation times (τ(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T(g) (430–600 °C) and a high V/III flux ratio using As(2). At 530 °C < T(g) < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τ(PL)~40 ns at RT, one order of magnitude longer than those reported so far. Long τ(s) (~6 ns) is also observed at RT.

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