Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ(PL)), and electron spin relaxation times (τ(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular be...

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Detalles Bibliográficos
Autores principales: Iba, Satoshi, Okamoto, Ryogo, Obu, Koki, Obata, Yuma, Ohno, Yuzo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8469624/
https://www.ncbi.nlm.nih.gov/pubmed/34577755
http://dx.doi.org/10.3390/mi12091112
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author Iba, Satoshi
Okamoto, Ryogo
Obu, Koki
Obata, Yuma
Ohno, Yuzo
author_facet Iba, Satoshi
Okamoto, Ryogo
Obu, Koki
Obata, Yuma
Ohno, Yuzo
author_sort Iba, Satoshi
collection PubMed
description We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ(PL)), and electron spin relaxation times (τ(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T(g) (430–600 °C) and a high V/III flux ratio using As(2). At 530 °C < T(g) < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τ(PL)~40 ns at RT, one order of magnitude longer than those reported so far. Long τ(s) (~6 ns) is also observed at RT.
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spelling pubmed-84696242021-09-27 Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature Iba, Satoshi Okamoto, Ryogo Obu, Koki Obata, Yuma Ohno, Yuzo Micromachines (Basel) Article We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ(PL)), and electron spin relaxation times (τ(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T(g) (430–600 °C) and a high V/III flux ratio using As(2). At 530 °C < T(g) < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τ(PL)~40 ns at RT, one order of magnitude longer than those reported so far. Long τ(s) (~6 ns) is also observed at RT. MDPI 2021-09-16 /pmc/articles/PMC8469624/ /pubmed/34577755 http://dx.doi.org/10.3390/mi12091112 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Iba, Satoshi
Okamoto, Ryogo
Obu, Koki
Obata, Yuma
Ohno, Yuzo
Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
title Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
title_full Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
title_fullStr Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
title_full_unstemmed Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
title_short Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
title_sort impacts of crystal quality on carrier recombination and spin dynamics in (110)-oriented gaas/algaas multiple quantum wells at room temperature
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8469624/
https://www.ncbi.nlm.nih.gov/pubmed/34577755
http://dx.doi.org/10.3390/mi12091112
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