Cargando…
Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ(PL)), and electron spin relaxation times (τ(s)) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular be...
Autores principales: | Iba, Satoshi, Okamoto, Ryogo, Obu, Koki, Obata, Yuma, Ohno, Yuzo |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8469624/ https://www.ncbi.nlm.nih.gov/pubmed/34577755 http://dx.doi.org/10.3390/mi12091112 |
Ejemplares similares
-
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
por: Hu, Changcheng, et al.
Publicado: (2011) -
Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot
por: Millington-Hotze, Peter, et al.
Publicado: (2023) -
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
por: Han, Lifen, et al.
Publicado: (2011) -
Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
por: Ye, Huiqi, et al.
Publicado: (2011) -
Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum
Dots on Si Substrates
por: Boras, Giorgos, et al.
Publicado: (2021)