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Reconsideration of Nanowire Growth Theory at Low Temperatures
We present a growth model that describes the nanowire length and radius versus time in the absence of evaporation or scattering of semiconductor atoms (group III atoms in the case of III-V NWs) from the substrate, nanowire sidewalls or catalyst nanoparticle. The model applies equally well to low-tem...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8470243/ https://www.ncbi.nlm.nih.gov/pubmed/34578691 http://dx.doi.org/10.3390/nano11092378 |