Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF(x)) as the resistive switching layer are reported. The electroforming-free MgF(x) based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10...

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Detalles Bibliográficos
Autores principales: Das, Nayan C., Kim, Minjae, Rani, Jarnardhanan R., Hong, Sung-Min, Jang, Jae-Hyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8471686/
https://www.ncbi.nlm.nih.gov/pubmed/34577692
http://dx.doi.org/10.3390/mi12091049
Descripción
Sumario:Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF(x)) as the resistive switching layer are reported. The electroforming-free MgF(x) based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10(2) and good data retention of >10(4) s. The resistive switching mechanism in the Ti/MgF(x)/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF(x) layer. In addition, filamentary switching mode at the interface between the MgF(x) and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

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