Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF(x)) as the resistive switching layer are reported. The electroforming-free MgF(x) based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10(2) and good data retention of >10(4) s. The resistive switching mechanism in the Ti/MgF(x)/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF(x) layer. In addition, filamentary switching mode at the interface between the MgF(x) and Ti layers is assisted by O–H group-related defects on the surface of the active layer.