Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF(x)) as the resistive switching layer are reported. The electroforming-free MgF(x) based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10...

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Detalles Bibliográficos
Autores principales: Das, Nayan C., Kim, Minjae, Rani, Jarnardhanan R., Hong, Sung-Min, Jang, Jae-Hyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8471686/
https://www.ncbi.nlm.nih.gov/pubmed/34577692
http://dx.doi.org/10.3390/mi12091049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8471686/
https://www.ncbi.nlm.nih.gov/pubmed/34577692
http://dx.doi.org/10.3390/mi12091049

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