Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and pro...

Descripción completa

Detalles Bibliográficos
Autores principales: Wejrzanowski, Tomasz, Tymicki, Emil, Plocinski, Tomasz, Bucki, Janusz Józef, Tan, Teck Leong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8473159/
https://www.ncbi.nlm.nih.gov/pubmed/34577274
http://dx.doi.org/10.3390/s21186066

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8473159/
https://www.ncbi.nlm.nih.gov/pubmed/34577274
http://dx.doi.org/10.3390/s21186066

Ejemplares similares