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Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and pro...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8473159/ https://www.ncbi.nlm.nih.gov/pubmed/34577274 http://dx.doi.org/10.3390/s21186066 |