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A molecular design approach towards elastic and multifunctional polymer electronics

Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a...

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Detalles Bibliográficos
Autores principales: Zheng, Yu, Yu, Zhiao, Zhang, Song, Kong, Xian, Michaels, Wesley, Wang, Weichen, Chen, Gan, Liu, Deyu, Lai, Jian-Cheng, Prine, Nathaniel, Zhang, Weimin, Nikzad, Shayla, Cooper, Christopher B., Zhong, Donglai, Mun, Jaewan, Zhang, Zhitao, Kang, Jiheong, Tok, Jeffrey B.-H., McCulloch, Iain, Qin, Jian, Gu, Xiaodan, Bao, Zhenan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8481247/
https://www.ncbi.nlm.nih.gov/pubmed/34588448
http://dx.doi.org/10.1038/s41467-021-25719-9
Descripción
Sumario:Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a molecular design concept that simultaneously achieves all these targeted properties in both polymeric semiconductors and dielectrics, without compromising electrical performance. This is enabled by covalently-embedded in-situ rubber matrix (iRUM) formation through good mixing of iRUM precursors with polymer electronic materials, and finely-controlled composite film morphology built on azide crosslinking chemistry which leverages different reactivities with C–H and C=C bonds. The high covalent crosslinking density results in both superior elasticity and solvent resistance. When applied in stretchable transistors, the iRUM-semiconductor film retained its mobility after stretching to 100% strain, and exhibited record-high mobility retention of 1 cm(2) V(−1) s(−1) after 1000 stretching-releasing cycles at 50% strain. The cycling life was stably extended to 5000 cycles, five times longer than all reported semiconductors. Furthermore, we fabricated elastic transistors via consecutively photo-patterning of the dielectric and semiconducting layers, demonstrating the potential of solution-processed multilayer device manufacturing. The iRUM represents a molecule-level design approach towards robust skin-inspired electronics.