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Electrical and dielectric parameters in TiO(2)-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
This paper reports the catalyst-free coaxial TiO(2)/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) chara...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8494745/ https://www.ncbi.nlm.nih.gov/pubmed/34615953 http://dx.doi.org/10.1038/s41598-021-99354-1 |