Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispersive synchrotron X-ray diffraction and Raman spectr...

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Detalles Bibliográficos
Autores principales: Diep, Nhu Quynh, Wu, Ssu Kuan, Liu, Cheng Wei, Huynh, Sa Hoang, Chou, Wu Ching, Lin, Chih Ming, Zhang, Dong Zhou, Ho, Ching Hwa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8494905/
https://www.ncbi.nlm.nih.gov/pubmed/34615957
http://dx.doi.org/10.1038/s41598-021-99419-1

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