An Adaptive STDP Learning Rule for Neuromorphic Systems

The promise of neuromorphic computing to develop ultra-low-power intelligent devices lies in its ability to localize information processing and memory storage in synaptic circuits much like the synapses in the brain. Spiking neural networks modeled using high-resolution synapses and armed with local unsupervised learning rules like spike time-dependent plasticity (STDP) have shown promising results in tasks such as pattern detection and image classification. However, designing and implementing a conventional, multibit STDP circuit becomes complex both in terms of the circuitry and the required silicon area. In this work, we introduce a modified and hardware-friendly STDP learning (named adaptive STDP) implemented using just 4-bit synapses. We demonstrate the capability of this learning rule in a pattern recognition task, in which a neuron learns to recognize a specific spike pattern embedded within noisy inhomogeneous Poisson spikes. Our results demonstrate that the performance of the proposed learning rule (94% using just 4-bit synapses) is similar to the conventional STDP learning (96% using 64-bit floating-point precision). The models used in this study are ideal ones for a CMOS neuromorphic circuit with analog soma and synapse circuits and mixed-signal learning circuits. The learning circuit stores the synaptic weight in a 4-bit digital memory that is updated asynchronously. In circuit simulation with Taiwan Semiconductor Manufacturing Company (TSMC) 250 nm CMOS process design kit (PDK), the static power consumption of a single synapse and the energy per spike (to generate a synaptic current of amplitude 15 pA and time constant 3 ms) are less than 2 pW and 200 fJ, respectively. The static power consumption of the learning circuit is less than 135 pW, and the energy to process a pair of pre- and postsynaptic spikes corresponding to a single learning step is less than 235 pJ. A single 4-bit synapse (capable of being configured as excitatory, inhibitory, or shunting inhibitory) along with its learning circuitry and digital memory occupies around 17,250 μm(2) of silicon area.