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Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors
Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high‐gain route toward photodetection in the form of single‐photon detectors. Here...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8498866/ https://www.ncbi.nlm.nih.gov/pubmed/34365721 http://dx.doi.org/10.1002/advs.202102437 |
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author | Seo, Junseok Lee, Jin Hee Pak, Jinsu Cho, Kyungjune Kim, Jae‐Keun Kim, Jaeyoung Jang, Juntae Ahn, Heebeom Lim, Seong Chu Chung, Seungjun Kang, Keehoon Lee, Takhee |
author_facet | Seo, Junseok Lee, Jin Hee Pak, Jinsu Cho, Kyungjune Kim, Jae‐Keun Kim, Jaeyoung Jang, Juntae Ahn, Heebeom Lim, Seong Chu Chung, Seungjun Kang, Keehoon Lee, Takhee |
author_sort | Seo, Junseok |
collection | PubMed |
description | Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high‐gain route toward photodetection in the form of single‐photon detectors. Here, the authors report ultrasensitive avalanche phototransistors based on monolayer MoS(2) synthesized by chemical vapor deposition. A lower critical field for the electrical breakdown under illumination shows strong evidence for avalanche breakdown initiated by photogenerated carriers in MoS(2) channel. By utilizing the photo‐initiated carrier multiplication, their avalanche photodetectors exhibit the maximum responsivity of ≈3.4 × 10(7) A W(−1) and the detectivity of ≈4.3 × 10(16) Jones under a low dark current, which are a few orders of magnitudes higher than the highest values reported previously, despite the absence of any additional chemical treatments or photosensitizing layers. The realization of both the ultrahigh photoresponsivity and detectivity is attributed to the interplay between the carrier multiplication by avalanche breakdown and carrier injection across a Schottky barrier between the channel and metal electrodes. This work presents a simple and powerful method to enhance the performance of photodetectors based on carrier multiplication phenomena in 2D materials and provides the underlying physics of atomically thin avalanche photodetectors. |
format | Online Article Text |
id | pubmed-8498866 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-84988662021-10-12 Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors Seo, Junseok Lee, Jin Hee Pak, Jinsu Cho, Kyungjune Kim, Jae‐Keun Kim, Jaeyoung Jang, Juntae Ahn, Heebeom Lim, Seong Chu Chung, Seungjun Kang, Keehoon Lee, Takhee Adv Sci (Weinh) Research Articles Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high‐gain route toward photodetection in the form of single‐photon detectors. Here, the authors report ultrasensitive avalanche phototransistors based on monolayer MoS(2) synthesized by chemical vapor deposition. A lower critical field for the electrical breakdown under illumination shows strong evidence for avalanche breakdown initiated by photogenerated carriers in MoS(2) channel. By utilizing the photo‐initiated carrier multiplication, their avalanche photodetectors exhibit the maximum responsivity of ≈3.4 × 10(7) A W(−1) and the detectivity of ≈4.3 × 10(16) Jones under a low dark current, which are a few orders of magnitudes higher than the highest values reported previously, despite the absence of any additional chemical treatments or photosensitizing layers. The realization of both the ultrahigh photoresponsivity and detectivity is attributed to the interplay between the carrier multiplication by avalanche breakdown and carrier injection across a Schottky barrier between the channel and metal electrodes. This work presents a simple and powerful method to enhance the performance of photodetectors based on carrier multiplication phenomena in 2D materials and provides the underlying physics of atomically thin avalanche photodetectors. John Wiley and Sons Inc. 2021-08-08 /pmc/articles/PMC8498866/ /pubmed/34365721 http://dx.doi.org/10.1002/advs.202102437 Text en © 2021 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Seo, Junseok Lee, Jin Hee Pak, Jinsu Cho, Kyungjune Kim, Jae‐Keun Kim, Jaeyoung Jang, Juntae Ahn, Heebeom Lim, Seong Chu Chung, Seungjun Kang, Keehoon Lee, Takhee Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors |
title | Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors |
title_full | Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors |
title_fullStr | Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors |
title_full_unstemmed | Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors |
title_short | Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors |
title_sort | ultrasensitive photodetection in mos(2) avalanche phototransistors |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8498866/ https://www.ncbi.nlm.nih.gov/pubmed/34365721 http://dx.doi.org/10.1002/advs.202102437 |
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