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Unusual Temperature Dependence of Bandgap in 2D Inorganic Lead‐Halide Perovskite Nanoplatelets

Understanding the origin of temperature‐dependent bandgap in inorganic lead‐halide perovskites is essential and important for their applications in photovoltaics and optoelectronics. Herein, it is found that the temperature dependence of bandgap in CsPbBr(3) perovskites is variable with material dim...

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Detalles Bibliográficos
Autores principales: Yu, Shaohua, Xu, Jin, Shang, Xiaoying, Ma, En, Lin, Fulin, Zheng, Wei, Tu, Datao, Li, Renfu, Chen, Xueyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8498867/
https://www.ncbi.nlm.nih.gov/pubmed/34382362
http://dx.doi.org/10.1002/advs.202100084
Descripción
Sumario:Understanding the origin of temperature‐dependent bandgap in inorganic lead‐halide perovskites is essential and important for their applications in photovoltaics and optoelectronics. Herein, it is found that the temperature dependence of bandgap in CsPbBr(3) perovskites is variable with material dimensionality. In contrast to the monotonous redshift ordinarily observed in bulk‐like CsPbBr(3) nanocrystals (NCs), the bandgap of 2D CsPbBr(3) nanoplatelets (NPLs) exhibits an initial blueshift then redshift trend with decreasing temperature (290–10 K). The Bose–Einstein two‐oscillator modeling manifests that the blueshift‐redshift crossover of bandgap in the NPLs is attributed to the significantly larger weight of contribution from electron‐optical phonon interaction to the bandgap renormalization in the NPLs than in the NCs. These new findings may gain deep insights into the origin of bandgap shift with temperature for both fundamentals and applications of perovskite semiconductor materials.