4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matc...

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Autores principales: Bugu, Sinan, Nishiyama, Shimpei, Kato, Kimihiko, Liu, Yongxun, Murakami, Shigenori, Mori, Takahiro, Ferrus, Thierry, Kodera, Tetsuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8501031/
https://www.ncbi.nlm.nih.gov/pubmed/34625617
http://dx.doi.org/10.1038/s41598-021-99560-x
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author Bugu, Sinan
Nishiyama, Shimpei
Kato, Kimihiko
Liu, Yongxun
Murakami, Shigenori
Mori, Takahiro
Ferrus, Thierry
Kodera, Tetsuo
author_facet Bugu, Sinan
Nishiyama, Shimpei
Kato, Kimihiko
Liu, Yongxun
Murakami, Shigenori
Mori, Takahiro
Ferrus, Thierry
Kodera, Tetsuo
author_sort Bugu, Sinan
collection PubMed
description We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.
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spelling pubmed-85010312021-10-12 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot Bugu, Sinan Nishiyama, Shimpei Kato, Kimihiko Liu, Yongxun Murakami, Shigenori Mori, Takahiro Ferrus, Thierry Kodera, Tetsuo Sci Rep Article We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms. Nature Publishing Group UK 2021-10-08 /pmc/articles/PMC8501031/ /pubmed/34625617 http://dx.doi.org/10.1038/s41598-021-99560-x Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Bugu, Sinan
Nishiyama, Shimpei
Kato, Kimihiko
Liu, Yongxun
Murakami, Shigenori
Mori, Takahiro
Ferrus, Thierry
Kodera, Tetsuo
4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_full 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_fullStr 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_full_unstemmed 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_short 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
title_sort 4.2 k sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8501031/
https://www.ncbi.nlm.nih.gov/pubmed/34625617
http://dx.doi.org/10.1038/s41598-021-99560-x
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