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Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a si...

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Detalles Bibliográficos
Autores principales: Kukushkin, Sergey A., Osipov, Andrey V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8510027/
https://www.ncbi.nlm.nih.gov/pubmed/34639976
http://dx.doi.org/10.3390/ma14195579