Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown by metal-or...

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Detalles Bibliográficos
Autores principales: Mols, Yves, Vais, Abhitosh, Yadav, Sachin, Witters, Liesbeth, Vondkar, Komal, Alcotte, Reynald, Baryshnikova, Marina, Boccardi, Guillaume, Waldron, Niamh, Parvais, Bertrand, Collaert, Nadine, Langer, Robert, Kunert, Bernardette
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8510094/
https://www.ncbi.nlm.nih.gov/pubmed/34640072
http://dx.doi.org/10.3390/ma14195682

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